NONVOLATILE MEMORY DEVICE HAVING ON DIE TERMINATION CIRCUIT AND CONTROL METHOD THEREOF
摘要
PURPOSE: A nonvolatile memory device with an on-die termination circuit and a controlling method thereof are provided to obtain high speed and low power properties by activating an ODT in a section which requires data reliability. CONSTITUTION: An on-die termination circuit(150) is connected to an input and output circuit(140). An on-die termination control logic detects a preamble of a strobe signal by referring to a control signal and a command. The on-die termination control logic activates the on-die termination circuit in a preamble section. The on-die termination control logic detects a postamble of the strobe signal by referring to a control signal and inactivates the on-die termination circuit in the postamble section.
申请公布号
KR20120048750(A)
申请公布日期
2012.05.16
申请号
KR20100109409
申请日期
2010.11.04
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, CHUL BUM;KANG, SANG CHUL;RYU, JIN HO;KWON, SEOK CHEON