发明名称 NONVOLATILE MEMORY DEVICE HAVING ON DIE TERMINATION CIRCUIT AND CONTROL METHOD THEREOF
摘要 PURPOSE: A nonvolatile memory device with an on-die termination circuit and a controlling method thereof are provided to obtain high speed and low power properties by activating an ODT in a section which requires data reliability. CONSTITUTION: An on-die termination circuit(150) is connected to an input and output circuit(140). An on-die termination control logic detects a preamble of a strobe signal by referring to a control signal and a command. The on-die termination control logic activates the on-die termination circuit in a preamble section. The on-die termination control logic detects a postamble of the strobe signal by referring to a control signal and inactivates the on-die termination circuit in the postamble section.
申请公布号 KR20120048750(A) 申请公布日期 2012.05.16
申请号 KR20100109409 申请日期 2010.11.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, CHUL BUM;KANG, SANG CHUL;RYU, JIN HO;KWON, SEOK CHEON
分类号 G11C7/10;G11C16/32 主分类号 G11C7/10
代理机构 代理人
主权项
地址