发明名称 NON-VOLATILE MEMORY CELL ARRAY AND NON-VOLATILE MEMORY DEVICE
摘要 PURPOSE: A nonvolatile memory cell array and a nonvolatile memory device are provided to improve performance by shortening an erase operation time. CONSTITUTION: A nonvolatile memory cell array(10) includes a page and an erase marker. The page comprises one or more nonvolatile memory cells. The erase marker corresponds to the page and displays whether the page is erased or not. The nonvolatile memory cell is a nonvolatile memory cell which performs an over-write function and includes a phase-change random access memory. An erase marker comprises a phase change memory cell.
申请公布号 KR20120048872(A) 申请公布日期 2012.05.16
申请号 KR20100110301 申请日期 2010.11.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SEO, HUI KWON;LEE, YEONG TAEK;SHIN, YONG SHIK
分类号 G11C16/14;G11C13/02;G11C16/06;G11C16/10 主分类号 G11C16/14
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