发明名称 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
摘要 PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve an electrical characteristic and reliability by including a penetrating electrode structure having an air gap. CONSTITUTION: A substrate(10) has a first side(11) and a second side(12) facing the first side. An integrated circuit(13) is included in the substrate. A pad(14) is electrically connected to the integrated circuit. A passivation film(15) exposing a part of the pad is formed on the first side of the substrate. An air gap(21) is formed to surround the first region of a via hole(16).
申请公布号 KR20120048991(A) 申请公布日期 2012.05.16
申请号 KR20100110522 申请日期 2010.11.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HAN, KYU HEE;PARK, BYUNG LYUL;KIM, BYUNG HEE;AHN SANGHOON;NAM, SANG DON;KIM, KYOUNG HEE
分类号 H01L23/48;H01L23/045;H01L23/12 主分类号 H01L23/48
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