| 摘要 |
A method for fabricating a semiconductor device including a vertical channel transistor includes providing a substrate including a semiconductor pillar, forming a gate electrode surrounding the semiconductor pillar, forming an impurity region for a bit line by doping impurities into the substrate and forming a device isolation trench by etching a portion of the substrate including the impurity region to a certain depth, thereby defining the bit line, wherein the impurity doping is performed with given concentration so as to form the impurity region under the semiconductor pillar.
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