| 摘要 |
<p>PURPOSE: A semiconductor device for improving the driving current of a cell and a manufacturing method thereof is provided to increase the width of a pin by performing SEG(Silicon Epitaxial Growth) on a sidewall of the pin when a saddle pin is formed. CONSTITUTION: An element isolation region(220) defined an active region(210) is formed on a semiconductor substrate(200). A hard mask layer and a photosensitive film are formed on an upper portion of the active region and the element isolation region. A hard mask layer pattern is formed by etching a hard mask layer by using a photosensitive pattern as an etching mask. A first recess(235) is formed by etching the element isolation region by using the hard mask layer pattern as the etching mask. A gate pattern(280) is formed to be vertical to a longitudinal direction of the active region.</p> |
