发明名称 |
Process for manufacturing a magnetic tunnel junction (MTJ) device |
摘要 |
A process for manufacturing a high performance MTJ it is described: A first cap layer of NiFeHf is deposited on the free layer, followed by a second cap layer of Ru on Ta. The device is then heated so that oxygen trapped in the free layer diffuses into the NiFeHf layer, thereby sharpening the interface between the tunnel barrier layer and the free layer. |
申请公布号 |
US8176622(B2) |
申请公布日期 |
2012.05.15 |
申请号 |
US20100657775 |
申请日期 |
2010.01.27 |
申请人 |
HORNG CHENG T.;TONG RU-YING;TORNG CHYU-JIUH;KULA WITOLD;MAGIC TECHNOLOGIES, INC. |
发明人 |
HORNG CHENG T.;TONG RU-YING;TORNG CHYU-JIUH;KULA WITOLD |
分类号 |
G11B5/127;H04R31/00 |
主分类号 |
G11B5/127 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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