发明名称 |
Manufacturing method of semiconductor device and substrate processing apparatus |
摘要 |
A manufacturing method of a semiconductor device is provided, comprising: loading a substrate into a processing chamber; forming a first film on the substrate by supplying silicon atom-containing gas, boron atom-containing gas, and germanium atom-containing gas into the processing chamber; forming a second film on the first film by supplying the silicon atom-containing gas and the boron atom-containing gas into the processing chamber; and unloading the substrate from the processing chamber. |
申请公布号 |
US8178428(B2) |
申请公布日期 |
2012.05.15 |
申请号 |
US20100656415 |
申请日期 |
2010.01.28 |
申请人 |
NODA TAKAAKI;WANG JIE;TONARI KAZUAKI;SUGIYAMA SATORU;HITACHI KOKUSAI ELECTRIC INC.;ELPIDA MEMORY, INC. |
发明人 |
NODA TAKAAKI;WANG JIE;TONARI KAZUAKI;SUGIYAMA SATORU |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|