发明名称 Sub-threshold CMOS temperature detector
摘要 A CMOS temperature detection circuit includes a start-up circuit for generating a start-up voltage (VN), and a proportional to absolute temperature (PTAT) current generator coupled to the start-up circuit for generating a PTAT current. The start-up voltage turns on the PTAT current generator, and the PTAT current generator uses the sub-threshold characteristics of CMOS to generate the PTAT current. A PTAT voltage generator coupled to the PTAT current generator receives the PTAT current and generates a PTAT voltage and an inverse PTAT voltage (VBE). A comparator circuit coupled to the voltage generator compares the inverse PTAT voltage to first and second alarm limits, which are defined using the generated PTAT voltage, and generates an alarm signal based on the comparison results.
申请公布号 US8177426(B2) 申请公布日期 2012.05.15
申请号 US20090510277 申请日期 2009.07.28
申请人 GUO SHUBAO;JIN JIE;SUN ZHENGUO;TIAN LEI;WU XIAOWEN;FREESCALE SEMICONDUCTOR, INC. 发明人 GUO SHUBAO;JIN JIE;SUN ZHENGUO;TIAN LEI;WU XIAOWEN
分类号 G01K7/00 主分类号 G01K7/00
代理机构 代理人
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