发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A semiconductor wafer having IGBT elements and transistors formed on a surface thereof is prepared. Electron beams are emitted all over the surface of the semiconductor wafer. Recombination centers are formed in the IGBT elements and the transistors. ON voltages of the transistors are measured by a measurement device, and lifetimes defined in the IGBT elements and the transistors are recovered by a prescribed annealing treatment. When the lifetimes are recovered, a control device controls an annealing treatment amount in the annealing treatment based on the measured ON voltages of the transistors such that ON voltages of the IGBT elements are each equal to a desired ON voltage. Variations in the ON voltages of a plurality of IGBT elements obtained from the semiconductor wafer are reduced. |
申请公布号 |
US8178365(B2) |
申请公布日期 |
2012.05.15 |
申请号 |
US201113011263 |
申请日期 |
2011.01.21 |
申请人 |
NARAZAKI ATSUSHI;MATSUSHITA YUKIO;OSAKA MASASHI;SAKAMOTO SHUNSUKE;MITSUBISHI ELECTRIC CORPORATION |
发明人 |
NARAZAKI ATSUSHI;MATSUSHITA YUKIO;OSAKA MASASHI;SAKAMOTO SHUNSUKE |
分类号 |
G01R31/26 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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