发明名称 Method for fabricating LED chip comprising reduced mask count and lift-off processing
摘要 A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.
申请公布号 US8178376(B2) 申请公布日期 2012.05.15
申请号 US201113046619 申请日期 2011.03.11
申请人 FANG KUO-LUNG;WENG CHIEN-SEN;CHAO CHIH-WEI;LEXTAR ELECTRONICS CORP. 发明人 FANG KUO-LUNG;WENG CHIEN-SEN;CHAO CHIH-WEI
分类号 H01L21/00 主分类号 H01L21/00
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