| 摘要 |
PURPOSE: A thin film manufacturing apparatus and a method for depositing a thin film using the same are provided to reduce a time for depositing an atomic layer by simultaneously supplying source gas, purge gas and reaction gas into a chamber. CONSTITUTION: A substrate support unit(20) is installed in a reaction chamber(10). A gas spraying unit(100) includes a plurality of spray units which spray on each substrate. At least one spay unit sprays a plasmalyzed reaction gas. A housing(40) includes a plurality of gas supply holes. A driving shaft(50) rotates in the housing. A sealing unit shields a space between the housing the driving shaft.
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