| 摘要 |
PURPOSE: A semiconductor memory device and a manufacturing method thereof are provided to prevent the reduction of the size of the exposed areas of the edges of an active area on which a storage node contact plug is formed. CONSTITUTION: A plurality of bit lines(41) crosses a word line(42). A plurality of active areas is inclined around the word line or the bit lines. The active areas, which are located on the same crossing line around any active area, are arranged in a zigzag shape.
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