发明名称 |
Memory device and memory programming method |
摘要 |
Provided are memory devices and memory programming methods. A memory device may include: a multi-level cell array that includes a plurality of multi-level cells; a programming unit that programs a first data page in the plurality of multi-level cells and programs a second data page in a multi-level cell from among the plurality of multi-level cells in which the first data page is programmed; an error analysis unit that analyzes read error information corresponding to the first data page based on a read voltage level to determine whether to correct a read error based on the analyzed read error information; and a controller that adjusts the read voltage level of the first data page depending on the determination result. Through this, it is possible to reduce an error occurrence when reading and/or programming a data page. |
申请公布号 |
US8179718(B2) |
申请公布日期 |
2012.05.15 |
申请号 |
US20080318560 |
申请日期 |
2008.12.31 |
申请人 |
CHO KYOUNG LAE;PARK YOON DONG;KONG JUN JIN;KIM YONG JUNE;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO KYOUNG LAE;PARK YOON DONG;KONG JUN JIN;KIM YONG JUNE |
分类号 |
G11C16/04;G11C16/06 |
主分类号 |
G11C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|