FUSE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fuse of a semiconductor device is provided to form a strong electric field at the end part of an insulating layer by forming an electrode layer having a same width with the insulating layer in order to be connected to the insulating layer. CONSTITUTION: An insulating layer(104) is formed on a semiconductor substrate(100) including a source and drain region(102). The insulating layer includes an oxide layer. An end part(B) of the insulating layer is connected to the source and drain region. A poly-silicon layer(106) is formed on the insulating layer. The poly-silicon layer is not overlapped with a top extension line of the source and drain region. An electrode layer(108) having a same width with the insulating layer is formed on the insulating layer and the poly-silicon layer. A hard mask layer(110) is formed on the electrode layer.