| 摘要 |
A nonvolatile memory device includes a memory cell array, a data scanning unit, and a program unit. The memory cell array includes a plurality of memory cells, where each of the memory cells is programmable to store data have a first logic value or a second logic value. The data scanning unit is configured to search among a plurality of data to be programmed in the memory cells to identify data having the second logic value. The program unit is configured to group the identified data having the second logic value, and to program at least a portion of the group of identified data at a same time into the memory cells. |
