METHOD FOR FORMING METAL BUMP ON SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal bump for a semiconductor device is provided to prevent polymer to be damaged through flux coating and reflow by selectively eliminating a bump lower side metal material after executing a flux coating process and a reflow process. CONSTITUTION: Polymer(206) exposing a part of the upper side of a chip pad(204) is formed on a substrate. A metal bump structure(212b) is formed on the upper side of a bump lower side metal material(208a) through a plating process. The plating process is an electric plating process or an electro-less plating process. Flux(214) is coated on the front side of the substrate. The metal bump structure is converted into a metal bump through a reflow process. The bump lower side metal material formed in a region except for a metal bump is eliminated through a wet etching process or a dry etching process.