| 摘要 |
<p>The present invention provides a photovoltaic device comprising an electricity generating layer including at least one p/n type junction, the layer comprising a silicon-based non-single-crystalline semiconductor material, wherein a nitrogen concentration has a maximum peak at the junction interface of the p/n type junction, and the nitrogen concentration at the maximum peak is within a range from 1 x 10<18> atom/cm<3> to 1 x 10<20> atom/cm<3>, thereby providing a photovoltaic device of high photoelectric conversion efficiency and high reliability. <IMAGE></p> |
