发明名称 |
Coupled quantum well structure |
摘要 |
In the production of optical devices or the like utilizing an intersubband transition of a coupled quantum well, a quantum well structure having strong coupling is provided. In addition, a coupled well structure of excellent productivity capable of avoiding thinning of coupling barrier layer for strengthening the coupling is provided. In the semiconductor coupled well structure of the present invention, a coupled quantum well structure disposed on the semiconductor single crystal substrate includes a coupling barrier layer 1a disposed between two or more quantum well layers 2a and 2b, wherein the coupling barrier layer 1a has an energy barrier that is smaller than an excitation level (E4 and E3) and is larger than a ground level (E2 and E1). |
申请公布号 |
US8179585(B2) |
申请公布日期 |
2012.05.15 |
申请号 |
US20070377481 |
申请日期 |
2007.08.17 |
申请人 |
NAGASE MASANORI;AKIMOTO RYOICHI;ISHIKAWA HIROSHI;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
NAGASE MASANORI;AKIMOTO RYOICHI;ISHIKAWA HIROSHI |
分类号 |
G02F1/03;G02B6/10;G02F1/00;H01L29/06 |
主分类号 |
G02F1/03 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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