发明名称 Diode à capacité variable
摘要 1,072,886. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. May 4, 1966, No. 19714/66. Addition to 1,069,800. Heading H1K. A varactor diode includes a junction (5, Fig. 1) or a plurality of ohmically interconnected discrete junctions 14, as shown, Fig. 2, between a first region (4) or a plurality of first regions 13 of metal or semi-conductor material and a higher-resistivity second region 11 (or 2) on an insulating substrate 10 (or 1), the first region (4) or regions 13 being diffused into the second region so that the junction (5) or junctions 14 is or are slanted or stepped with respect to the interface 15 (or 6) between the . second region and the insulating substrate.
申请公布号 FR92447(E) 申请公布日期 1968.11.08
申请号 FR19670105000 申请日期 1967.05.03
申请人 ITT INDUSTRIES, INC. 发明人 MASH DERCK, HUBERT
分类号 H01L21/223;H01L29/00;H01L29/93 主分类号 H01L21/223
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