摘要 |
PURPOSE: An electron material layer forming method, an electron device manufacturing method using the same, and an apparatus thereof are provided to obtain the electron material layer of high quality by forming the unit electron material layer through the neutral particle beam of the solid element. CONSTITUTION: A sputtering device(202) is included within a plasma chamber(200). A neutral particle beam apparatus(500) having a neutral particle beam chamber(501) is arranged on the upper part of the plasma chamber. A metallic reflector(502) biased to the predetermined negative pressure is arranged within the neutral particle beam chamber.
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