发明名称 Forming method of electronic material layer and electronic device and apparatus adopting the method
摘要 PURPOSE: An electron material layer forming method, an electron device manufacturing method using the same, and an apparatus thereof are provided to obtain the electron material layer of high quality by forming the unit electron material layer through the neutral particle beam of the solid element. CONSTITUTION: A sputtering device(202) is included within a plasma chamber(200). A neutral particle beam apparatus(500) having a neutral particle beam chamber(501) is arranged on the upper part of the plasma chamber. A metallic reflector(502) biased to the predetermined negative pressure is arranged within the neutral particle beam chamber.
申请公布号 KR101145343(B1) 申请公布日期 2012.05.14
申请号 KR20090074008 申请日期 2009.08.11
申请人 发明人
分类号 H01L51/50;H01L21/203 主分类号 H01L51/50
代理机构 代理人
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