发明名称 PRE-CHARGE VOLTAGE GENERATOIN DEVICE AND SEMICONDUCTOR DEVICE WITH THE SAME
摘要 PURPOSE: A precharge voltage generating device and a semiconductor device including the same are provided to secure the sensing efficiency of data regardless of a temperature by changing a level of a precharge voltage according to a temperature change. CONSTITUTION: If a temperature is higher than a normal temperature, a temperature sensing unit(101) generates a temperature sensing signal with a lower level than a precharge voltage in the normal temperature. If the temperature is lower than the normal temperature, the temperature sensing unit generates a temperature sensing signal with a higher level than the precharge voltage in the normal temperature. A precharge voltage generating unit(102) increases or decreases the level of the precharge voltage by comparing the temperature sensing signal with the precharge signal.
申请公布号 KR20120047389(A) 申请公布日期 2012.05.14
申请号 KR20100108894 申请日期 2010.11.03
申请人 SK HYNIX INC. 发明人 LEE, SANG HO
分类号 G11C5/14;G11C7/04;G11C7/10 主分类号 G11C5/14
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