| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce the parasitic capacitance of a bit line by forming an oxide film having a low dielectric constant around a bit line conductive material. CONSTITUTION: A bit line(210) is formed on an upper of a semiconductor substrate. The bit line includes a bit line conductive material(205) and a hard mask layer(207). A first spacer(215) is formed on a bit line sidewall. A second spacer(217) is formed on the sidewall of the first spacer. The second spacer has a lower dielectric constant than the first spacer. |
