FIELD ASSISTED SWITCHING OF A MAGNETIC MEMORY ELEMENT

摘要

PURPOSE: A field assist switching of a magnetic memory element is provided to reduce a write period by generating an ampere field on a memory element. CONSTITUTION: A write current is applied via a magnetic memory element to initiate a magnetic precession of an element with a desirable state(204). A flow of a field assist current is initialized near the magnetic memory element while the write current is continuously applied to induce a magnetic field on the element(206). The field assist current continues to supply a field assist precession with a desirable state after the write current is completed.