| 摘要 |
Provided are a method for fabricating a capacitor and a semiconductor device using the same. The semiconductor device includes a MOS transistor capacitor, first and second plate capacitors, and a metal interconnection. The MOS transistor capacitor is arranged between a power supply and a ground. The first and second plate capacitors are arranged between the power supply and the ground. The metal interconnection is configured to connect the first and second plate capacitors. |
