THIN FILM SOLAR CELL USING SINGLE JUNCTION CU(IN,GA)SE2 AND METHOD FOR MANUFACTURING THEREOF

摘要

PURPOSE: A thin film solar cell using single junction CIGS(Cu(In,Ga)Se2) and a manufacturing method thereof are provided to preventing a surface and an interface due to the use of a buffer layer from being contaminated by providing a solar cell having a single-junction light absorption layer by using a P CIGS layer and a N CIGS layer. CONSTITUTION: A back electrode(2) is located on a substrate(1). A light absorption layer(3) is located on the back electrode. The light absorption layer is formed by bonding a P CIGS(Cu(In,Ga)Se2)(31) layer and a N CIGS(32) layer. A reflection barrier layer(4) is located on the light absorption layer. A grid electrode(5) is located on a side of the reflection barrier layer. A window layer(6) is located between the light absorption layer and the reflection barrier layer.