| 摘要 |
A reactor for growing a gallium nitride film is provided to reduce a thickness deviation between a plurality of gallium nitride films and to prevent yield reduction of the product due to a mechanical defect. A reactor includes an inlet(122) to input the reactive gas and an outlet(124) to discharge the reactive gas and a vertically reduced section for the flow direction of the reaction gas. The GaCl and NH3 generated by reacting metal Ga with HCI in the inlet of the reactor are supplied to the reactor. The flow of the reactive gas supplied to the reactor maintains the laminar flow.
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