| 摘要 |
An organic thin film transistor and a method for fabricating the same are provided to perform a source and drain photo process without damage of a first organic material film forming an activated layer, by contacting source and drain electrodes to a second organic material film by forming an insulator film and an aperture after patterning the activated layer. Gate electrodes(113) are formed on a substrate(111). A gate insulator film(115) is formed on the substrate including the gate electrodes. An activated layer has a first organic material film(117a) formed on the gate insulator film and an aperture exposing a part of a second organic material film(119a). A third organic material film(125) is formed on the second organic material film except the aperture of the second organic material film, and the first organic material film. Source and drain electrodes are formed on the aperture of the second organic material film and the third organic material film.
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