MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT EMITTING DEVICE USING PATTERNED SUBSTRATE

摘要

PURPOSE: A method for manufacturing a semiconductor light emitting device using a patterned substrate is provided to reduce the amount of laser which enters an active layer in lift off since a passage is changed by diffracting, scattering, refracting the laser absorbed into a sapphire substrate interface. CONSTITUTION: A convex portion(113) of a photonic crystal pattern is formed on the front side of a semiconductor substrate(110). An n-type semiconductor layer(115), an active layer(120), and a p-type semiconductor layer(125) are formed on the front side of the semiconductor substrate. A P electrode(135) is formed on the p-type semiconductor layer. A conductive substrate(140) is attached to the P electrode. An N electrode(145) is formed on the n-type semiconductor layer.