| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an air bridge capable of manufacturing an air bridge having a large covered area while suppressing degradation in rigidity of the air bridge, suppressing degradation in characteristic of a semiconductor element, and further avoiding the issue of residue of a spacer material. <P>SOLUTION: A resist layer 102 which is a second resist layer is applied on a resist layer 100. Exposure and development are performed on the resist layer 102 so as to leave a predetermined dimension W<SB POS="POST">2</SB>, as with the first layer (resist layer 100), and then, a third resist layer (resist layer 104) is applied. The exposure and development are performed on the third layer (resist layer 104) as well to leave a predetermined dimension W<SB POS="POST">3</SB>. A layer 106 which is the material for forming an air bridge 10 is stacked on the laminate structure of the resist layers 102, 104, and 106 which have been formed, to form the air bridge 10. By removing the resist, the air bridge 10 whose cross section has a staircase shape is completed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
