发明名称 Semiconductor body with strained region
摘要 A semiconductor body comprised of a semiconductor material includes a first monocrystalline region of the semiconductor material having a first lattice constant along a reference direction, a second monocrystalline region of the semiconductor material having a second lattice constant, which is different than the first, along the reference direction, and a third, strained monocrystalline region between the first region and the second region.
申请公布号 US2012112242(A1) 申请公布日期 2012.05.10
申请号 US201113237097 申请日期 2011.09.20
申请人 SCHULZE HANS-JOACHIM;NIEDERNOSTHEIDE FRANZ JOSEF;JOB REINHART;INFINEON TECHNOLOGIES AUSTRIA AG 发明人 SCHULZE HANS-JOACHIM;NIEDERNOSTHEIDE FRANZ JOSEF;JOB REINHART
分类号 H01L29/04;H01L21/20 主分类号 H01L29/04
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