ESD PROTECTION STRUCTURE IN SOI CIRCUIT AND METHOD FOR MAKING THE SAME

摘要

An ESD protection structure in an SOI circuit and a method for making the same are provided. The ESD protection structure comprises an SOI substrate and a gate controlled diode ESD protection device positioned on the SOI substrate. Wherein, the gate controlled diode ESD protection device comprises: a positive electrode, a negative electrode, a channel, a gate dielectric layer and a gate; the anode and the cathode are positioned on two ends of the channel, respectively, the gate dielectric layer and the gate are positioned on the channel sequentially; the channel is composed of an N type region and a P type region, and the N type region and the P type region form a structure of a vertical PN junction. By ion implantation, a vertical PN junction with large area is formed, capability of discharging large current is enhanced, integration level close to a bulk silicon ESD circuit is achieved, and robustness of the ESD in the SOI circuit is improved. The process of the ESD protection structure has low cost, and is completely compatible with conventional SOI circuits.