SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

A silicon carbide substrate (SB) has a substrate face (12B). A gate insulation film (15) is provided so as to cover a portion of the substrate face (12B). A gate electrode (17) covers a portion of the gate insulation film (15). A contact electrode (16) is provided on the substrate face (12B) so as to adjoin and make contact with the gate insulation film (15), and contains an alloy having Al atoms. Al atoms from the contact electrode (16) do not diffuse into the portion of the gate insulation film (15) that is sandwiched between the substrate face (12B) and the gate electrode (17). Thus, the reliability of the gate insulation film (15) of the semiconductor device can be improved when a contact electrode having Al atoms is used.