发明名称 INDEX GUIDE TYPE BURIED HETEROSTRUCTURE NITRIDE LASER DIODE STRUCTURE
摘要 <P>PROBLEM TO BE SOLVED: To provide a laser diode having a stronger mode stability and a low threshold current operation. <P>SOLUTION: The index guide type buried heterostructure nitride laser diode structure 100 has a ridge structure 111 having first, second and third faces, clad structures 121, clad layers 125, and a multiple quantum well structure 145 interposed between the clad structures 121 and the clad layers 125, and a buried layer 155 existing on the first, second and third faces of the ridge structure 111 and having an opening for electrical contact to the third face of the ridge structure 111. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012089895(A) 申请公布日期 2012.05.10
申请号 JP20120022808 申请日期 2012.02.06
申请人 XEROX CORP 发明人 DAVID P BAUER;KNEISSL MICHAEL A;LINDA T ROMANO;PAOLI THOMAS L;VAN DE WALLE CHRISTIAN G
分类号 H01S5/223;H01S5/227;H01S5/20;H01S5/323;H01S5/343 主分类号 H01S5/223
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