Control gate structure and method of forming a control gate structure

摘要

Semiconductor devices and methods of fabricating the devices are provided. An example device may include a substrate and a gate structure on the substrate. The gate structure includes a control gate having at least three distinct gate regions. First and second control gate regions are configured as a first field type, such as a high-gate or low-gate type. A third control gate region configured as a second field type (different from the first field type) is at least partially disposed between the first and second control gate regions.