发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR LASER DEVICE AND OPTICAL DEVICE HAVING THE LASER DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor laser device, capable of preventing reduction in light-emitting characteristics and service life of a semiconductor laser element due to an excessive heating process in jointing. <P>SOLUTION: A method for manufacturing a two-wavelength semiconductor laser device 100 (a semiconductor laser device), comprises the steps of: forming a solder layer 13a having a melting point T1 on an electrode 11 of a heat radiation base 10 through a barrier layer 5; forming a solder layer 14a having a melting point T2 on an electrode 12 of a heat radiation base 10 through a barrier layer 6; joining a red semiconductor laser element 20 to the heat radiation base 10 by melting the solder layer 13a to form a reaction solder layer 13 having a melting point T3 higher than the melting point T1 by the reaction of the electrode 11 and the solder layer 13a; and thereafter joining a blue-violet semiconductor laser element 30 to the heat radiation base 10 by heating and melting the solder layer 14a at a heating temperature T2. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012089578(A) |
申请公布日期 |
2012.05.10 |
申请号 |
JP20100232796 |
申请日期 |
2010.10.15 |
申请人 |
SANYO ELECTRIC CO LTD;SANYO OPTEC DESIGN CO LTD |
发明人 |
SHIMIZU HAJIME;AKIYOSHI SHINICHIRO |
分类号 |
H01S5/022;G11B7/125;H01S5/40 |
主分类号 |
H01S5/022 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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