| 摘要 |
<P>PROBLEM TO BE SOLVED: To effectively perform temperature adjustments of substrates having metal joining portions and improve throughput of substrate joining process. <P>SOLUTION: A joining apparatus 10 includes a processing container 70 in which an opening 78 is formed at a lower surface, a second heat treatment plate 90 in which a superposed wafer W<SB POS="POST">T</SB>is placed and heat treatment is performed thereon, a pressurizing mechanism 80 provided in the processing container 70 so as to face the heat treatment plate 90 and pressing the superposed wafer W<SB POS="POST">T</SB>toward the second heat treatment plate 90, an annular support base 95 provided on an inner surface of the processing container 70 so as to be along the opening 78 of the processing container 70 and hermetically closing a space between the processing container 70 and the second heat treatment plate 90, and a cooling mechanism 100 provided below the second heat treatment plate 90 and on an inner side of the support base 95. The cooling mechanism 100 includes a cooling plate having an upper surface provided so as to be parallel to the second heat treatment plate 90, a communication pipe communicating with the interior of the cooling plate and supplying air to the interior of the cooling plate, and a lifting mechanism moving up and down the cooling plate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
