<p>The purpose of the present invention is to control the occurrence of failed devices because of chipping that arises when semiconductor chips are separated by dicing in semiconductor devices having a nitride semiconductor layer formed by epitaxial growth on a Si substrate. Thus, the nitride semiconductor layer is formed by epitaxial growth on the substrate. On the outer periphery of the semiconductor chips, a scribe lane that surrounds the semiconductor device area is present. A structure for restricting chipping is provided on the nitride semiconductor layer following along the scribe lane. This structure for restricting chipping is constituted like wiring metal or pads for semiconductor devices and is a laminated structure of an Au layer and Ti layer. The product of the thickness and weight density of the structure for restricting chipping is set to be the same or greater than the product of the thickness and weight density of the nitride semiconductor layer (2).</p>
