MANUFACTURING METHOD FOR GRAPHENE SUBSTRATE, AND GRAPHENE SUBSTRATE

摘要

The present invention addresses the problem of providing a manufacturing method for graphene-on-insulator graphene substrates that can be manufactured in bulk with a high level of quality while also being inexpensive and directly applicable in the manufacture of semiconductor devices. The manufacturing method for graphene substrates produces graphene substrates by bringing a metal layer into contact with a carbide layer, causing the carbon in the carbide layer to melt into the metal layer by heating the metal layer and the carbide layer, and depositing the carbon of the metal layer on the surface of the carbide layer in the form of graphene by cooling the metal layer and the carbide layer.