RESIST ANTISTATIC FILM LAMINATE, METHOD FOR FORMING RELIEF PATTERN, AND ELECTRONIC COMPONENT

摘要

PROBLEM TO BE SOLVED: To provide a resist antistatic film laminate, in which a charge-up phenomenon is avoided and changes in the sensitivity of a resist film after exposure are suppressed, and thereby, a fine pattern having dimensions as designed can be formed.

SOLUTION: The resist antistatic film laminate includes on a supporting body: (1) a resist film comprising a resist composition containing at least a phenol compound (A) having a molecular weight of 150 to 3000 and an acid generator (B) containing a sulfonic acid structure represented by -SO3-or -SO3- and a carbon atom directly bonded to the sulfonic acid structure or an aromatic ring directly bonded to the sulfonic acid structure, in which no fluorine atom is bonded to the carbon atom or the aromatic ring directly bonded to the sulfonic acid structure; and (2) an antistatic film.

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