| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve characteristics of a semiconductor device. <P>SOLUTION: The semiconductor device comprises: a silicon substrate 1 whose plane orientation is (110); and a p-channel type field effect transistor formed in a p-MIS region 1B. The p-channel type field effect transistor comprises: a gate electrode GE2 arranged with a gate insulating film 3 interposed therebetween; and a source-drain region arranged inside a trench g2 provided in the silicon substrate 1 at both sides of the gate electrode GE2, and formed of SiGe having a larger lattice constant than that of Si. The trench g2 comprises: a first inclined plane whose plane orientation is (100); and a second inclined plane whose plane orientation crossing with the first inclined plane is (100), at a sidewall part positioned on the gate electrode GE2 side. According to the structure, an angle formed by the (110) plane and the (100) plane of the substrate is 45°, and the first inclined plane is formed in a relatively acute angle, thereby a compressive strain can be applied to a channel region of the p-channel type MISFET effectively. <P>COPYRIGHT: (C)2012,JPO&INPIT |
