| 发明名称 |
FORMATION METHOD OF SILICON OXIDE FILM, FORMATION METHOD OF SILICON NITRIDE FILM, AND FORMATION METHOD OF SILICON OXYNITRIDE FILM |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a formation method of an insulating film capable of forming a high-quality insulating film on a polysilicon. <P>SOLUTION: A formation method of a silicone oxide film comprises a step of depositing a polysilicon film on a substrate and a step of forming the silicon oxide film on the surface of the polysilicon film by exposing the surface of the polysilicon film to an atomic oxygen O* formed by exciting a plasma with a microwave to a mixed gas composed of a gas including oxygen and an inert gas mainly composed of a Kr gas. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012089855(A) |
申请公布日期 |
2012.05.10 |
| 申请号 |
JP20110249020 |
申请日期 |
2011.11.14 |
| 申请人 |
FOUNDATION FOR ADVANCEMENT OF INTERNATIONAL SCIENCE |
发明人 |
OMI TADAHIRO;SUGAWA SHIGETOSHI |
| 分类号 |
H01L21/8247;C23C8/02;C23C8/36;H01L21/31;H01L21/3105;H01L21/314;H01L21/316;H01L21/318;H01L21/336;H01L21/8238;H01L27/10;H01L27/105;H01L27/115;H01L29/423;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
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