发明名称 |
VERTICAL HETEROJUNCTION BIPOLAR TRANSISTORS WITH REDUCED BASE-COLLECTOR JUNCTION CAPACITANCE |
摘要 |
Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance, as well as fabrication methods for vertical heterojunction bipolar transistors and design structures for BiCMOS integrated circuits. The vertical heterojunction bipolar transistor includes a barrier layer between the intrinsic base and the extrinsic base that blocks or reduces diffusion of a dopant from the extrinsic base to the intrinsic base. The barrier layer has at least one opening that permits direct contact between the intrinsic base and a portion of the extrinsic base disposed in the opening. |
申请公布号 |
US2012112244(A1) |
申请公布日期 |
2012.05.10 |
申请号 |
US20100939668 |
申请日期 |
2010.11.04 |
申请人 |
CAMILLO-CASTILLO RENATA;DAHLSTROM ERIK M.;LIU QIZHI;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CAMILLO-CASTILLO RENATA;DAHLSTROM ERIK M.;LIU QIZHI |
分类号 |
H01L29/737;G06F17/50;H01L21/331 |
主分类号 |
H01L29/737 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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