| 发明名称 |
GROWTH OF PLANAR REDUCED DISLOCATION DENSITY M-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY |
| 摘要 |
A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane gaN films are produced for use as substrates for polarization-free device growth. |
| 申请公布号 |
KR20120046748(A) |
申请公布日期 |
2012.05.10 |
| 申请号 |
KR20127004001 |
申请日期 |
2005.05.31 |
| 申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
HASKELL BENJAMIN A.;MCLAURIN MELVIN B.;DENBAARS STEVEN P.;SPECK JAMES S.;NAKAMURA SHUJI |
| 分类号 |
H01L21/20;C30B25/02;C30B29/40;H01L21/205;H01L29/15;H01L31/0312;H01L33/00 |
主分类号 |
H01L21/20 |
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