| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a defect like fence in a dual damascene pattern, by forming the dual damascene pattern using wet etching rate difference of an insulation film to an etchant. CONSTITUTION: An etch stop layer(13) is formed on a substrate where a conductive layer(12) is formed. A first inter-metal insulation film(14) is formed on the etch stop layer. A second inter-metal insulation film doped with impurities is formed on the first inter-insulation film. The second inter-metal insulation film is formed so that impurity doping concentration has gradient. A via hole is formed by etching the second and the first inter-metal insulation film. A trench is formed by etching the second inter-metal insulation film. The trench is linked with the via hole. A conductive layer is revealed by etching the etch stop layer under the via hole.
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