METHOD FOR MEASUREMENT OF LIFE SPAN OF NONEQUILIBRIUM CARRIERS IN SEMI-CONDUCTORS

摘要

FIELD: electricity. ^ SUBSTANCE: sounding of test specimen is performed with emission of photon energy less than width of forbidden gap; modulation of non-equilibrium carriers' concentration in semi-conductor is made and parameters of sounding emission passed through test specimen and reflected back are measured; life span of non-equilibrium charge carriers is calculated by measured parameters of sounding emission. Test specimen is made as structure of metal, dielectric and semi-conductor, at that concentration of non-equilibrium carriers' concentration is modulated by voltage supply between metal and semi-conducting layer of this structure. ^ EFFECT: possibility of life span measurement for non-equilibrium carriers in thin semi-conducting layers. ^ 3 dwg