| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device. <P>SOLUTION: In this semiconductor manufacturing method, a contact plug is formed through an interlayer film on a cell transistor in a cell region on a semiconductor substrate, and a contact plug is formed through an interlayer film on a transistor in a peripheral circuit region. The method includes a step for forming a contact hole on the interlayer film on the cell transistor and forming a lower conductive plug of a silicon film on its bottom side, a step for laminating a metal film on the lower conductive plug to form a cell contact plug with a laminated structure, and a step for forming the contact hole on the interlayer film on the transistor for a peripheral circuit and forming the metal film inside to form the contact plug. The step for forming the metal film on the silicon film in the contact hole in the cell region, and the step for forming the metal film in the contact hole in the peripheral circuit region are performed at the same time. <P>COPYRIGHT: (C)2012,JPO&INPIT |
