| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of performing a simultaneous multi-bit writing process while averaging loads thereon, and further to provide a writing control method thereof. <P>SOLUTION: A nonvolatile semiconductor memory device has: identification code generation circuits 12<SB POS="POST">0</SB>through 12<SB POS="POST">31</SB>for generating identification codes assigned to all bits of an object to be written; a simultaneous written bit number calculation circuit 15 for calculating the number of bits of which an averaged and simultaneous writing is performed based on the generated identification codes within a range where the number of bits does not exceed the maximum number of bits capable of being simultaneously written; a writing area calculation circuit 16 for calculating a writing area in accordance with the calculated number of bits simultaneously written; and program pulse generation circuits 13<SB POS="POST">0</SB>through 13<SB POS="POST">31</SB>for generating program pulses based on writing data, the generated identification codes and the calculated writing area. <P>COPYRIGHT: (C)2012,JPO&INPIT |
