| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress process variation caused by a gap between silicon carbide substrates in the manufacturing process of a semiconductor device using a composite substrate having silicon carbide substrates. <P>SOLUTION: A bonded substrate having a support 30 and first and second silicon carbide substrates 11, 12 is prepared. The first silicon carbide substrate 11 has a first rear surface bonded to the support 30, a first surface facing the first rear surface, and a first side surface connecting the first rear surface and the first surface. The second silicon carbide substrate 12 has a second rear surface bonded to the support 30, a second surface facing the second rear surface, and a second side surface connecting the second rear surface and the second surface and forming a gap between the first side surface and itself. A filling part 40 which fills the gap is formed. The first and second surfaces are then polished, and then the filling part 40 is removed. Thereafter, a closing part for closing the gap is formed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
