| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing it, capable of suppressing degradation in semiconductor characteristics of a semiconductor chip having a recess of non-penetrating V-like groove on a semiconductor substrate caused by stress concentration on a corner part of the recess by thermal history of soldering. <P>SOLUTION: A p-type diffusion layer 31 of lattice pattern is provided on the front surface of an n-type wafer 1, and a lattice pattern having the same pitch as the pattern is provided on the rear surface. A V-like groove 21b is provided which comprises a bottom surface which is parallel to the rear surface and from which the p-type diffusion layer 31 is exposed, and a side surface 9d of tapered shape that rises from the bottom surface. A p-type semiconductor layer is provided on the rear surface which is surrounded with the tapered side surface 9d. A p-type separation layer 4b is provided along the side surface 9d which electrically connects the p-type diffusion layer 31 on the front surface to the p-type semiconductor layer on the rear surface. Relating to the V-like groove 21b, the vicinity of intersection between the corner part of the side surface and the bottom surface has a beveled shape. <P>COPYRIGHT: (C)2012,JPO&INPIT |
