发明名称 EPITAXIAL SUBSTRATE, SEMICONDUCTOR LIGHT-EMITTING DEVICE USING SUCH EPITAXIAL SUBSTRATE AND FABRICATION THEREOF
摘要 The invention provides an epitaxial substrate, a semiconductor light-emitting device using such epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, a crystal surface of the crystalline substrate thereon has a plurality of randomly arranged nanorods. The plurality of nanorods is formed of oxide of a material different from that forms the crystalline substrate.
申请公布号 US2012112158(A1) 申请公布日期 2012.05.10
申请号 US201113024226 申请日期 2011.02.09
申请人 CHYAN JIUNN-YIH;CHIEN HUNG-CHI;YANG KUN-LIN;HSU WEN-CHING;SINO-AMERICAN SILICON PRODUCTS INC. 发明人 CHYAN JIUNN-YIH;CHIEN HUNG-CHI;YANG KUN-LIN;HSU WEN-CHING
分类号 H01L33/06;B32B3/00;B32B3/30;C30B1/10;H01L33/28 主分类号 H01L33/06
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