发明名称 |
EPITAXIAL SUBSTRATE, SEMICONDUCTOR LIGHT-EMITTING DEVICE USING SUCH EPITAXIAL SUBSTRATE AND FABRICATION THEREOF |
摘要 |
The invention provides an epitaxial substrate, a semiconductor light-emitting device using such epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, a crystal surface of the crystalline substrate thereon has a plurality of randomly arranged nanorods. The plurality of nanorods is formed of oxide of a material different from that forms the crystalline substrate.
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申请公布号 |
US2012112158(A1) |
申请公布日期 |
2012.05.10 |
申请号 |
US201113024226 |
申请日期 |
2011.02.09 |
申请人 |
CHYAN JIUNN-YIH;CHIEN HUNG-CHI;YANG KUN-LIN;HSU WEN-CHING;SINO-AMERICAN SILICON PRODUCTS INC. |
发明人 |
CHYAN JIUNN-YIH;CHIEN HUNG-CHI;YANG KUN-LIN;HSU WEN-CHING |
分类号 |
H01L33/06;B32B3/00;B32B3/30;C30B1/10;H01L33/28 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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